The power amplifier 9-10 GHz

Sector: Electronic devices
Price: Contract Price
Minimum Order: 1 piece
Terms of Delivery: INCOTERMS
Full Product Information:
Application field: Radar, radio monitoring, radio electronic devices, radio measuring equipment. DISTINCTIVE FEATURES: Monolithic integrated design, microstrip design, wide frequency range, high efficiency SPECIFICATIONS Parameter name Standard Frequency range, GHz, not less than 9-10 Gain, dB. Not less than 14 The non-uniformity of gain in the operating range of input frequencies dB, not more than 1.0 Power output at compression gain on 1 dB, dBm, not less than 31.0 VSWR output operating frequency range in the mode "On", not more than 2.0 DESCRIPTION The amplifier is made in monolithic technology on the structures of gallium arsenide. Active amplifier element: field-effect transistor with Schottky-barrier gate length is 0, 25 mic. Earthing points are displayed on the back side of the substrate through the openings in the crystal of gallium arsenide, which can significantly reduce the parasitic inductance and obtain a wide bandwidth of microwave signal at high gain.

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