Sputtering ion source based on accelerator with anodic layer SPIS-002

The sputtering ion source SPIS-002 based on the accelerator with anodic layer is intended for deposition of thin films of metals, semiconductors and dielectrics by ion-beam and reactive ion-beam sputtering methods. APPLICATION AREA: ion-beam sputtering reactive ion-beam sputtering. TECHNICAL CHARACTERISTICS : Target diameter, mm 80. Anodic voltage (DC), V 800...6000. Ion energy, eV 300...2000. Discharge current, mA up to 300. Ion beam current, mA up to 250. Working pressure, Pa 0,01...0,06. Gas flow, m/sec up to 40. Work gases Ar, O2 , N2 , CH4 и т.д. Deposition rate (Al), nm/sec up to 0,8. Size, mm Ø 307х296. Weight, kg, not more 12. ADVANTAGES: the ion source allows sputtering of metallic, semiconductor and dielectric (SiO2, BN, graphite, etc.) targets; an electromagnet is used as a source of the magnetic field, thus allowing an optimization of the magnetic field induction in the acceleration channel, and an increase in the ion beam generation efficiency; a unique construction of the flange mounting and removable target unit of the ion source provides an easy access for an operator to change targets and clean the ion sources; ion source may be equipped with a rotary target holder for four targets of different material to form multilayer structures within a single vacuum cycle; a possibility to turn the sputtering ion source into an assisting one by replacing the parts of the discharge area and mounting the target unit; it is possible to obtain component films by applying mixtures of rare and reactive gases (oxygen, nitrogen, etc.) at sputtering of metallic targets.