Ion source based on end-Hall accelerator with integrated plasma electron source

Ion source based on end-Hall accelerator with integrated plasma electron source is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition when reactive gases are used. APPLICATION AREA: ion-beam assisted deposition (IBAD) in combination with electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems; formation of substrate film transition layer (ion mixing); ion cleaning and surface activation; direct beam deposition (DiBD). TECHNICAL CHARACTERISTICS: Discharge voltage, V 60...200. Discharge current, А 5,0. Ion energy, eV 30...140. Ion beam current, mА up to 600. Working gases Ar, O2, N2, H2, hydrocarbons, chloride- and fluoride-containing gases. Working pressure, Pа 0,015-0,06. Gas flow 15...60. Ion beam profile j = kl·cosn α (n от 1..3.) Non-uniformity of substrate holder processing Ø 1000 мм, %, not more 6. ADVANTAGES: no filament elements; insensitive to reactive gas environment; long life between servicing; extended ranges of operating modes obtained through the use of an electromagnet as the magnetic field source for the ion source; water cooling of the anode and body of the ion source.